Invention Grant
- Patent Title: Memory device and method of operating the memory device including program verify operation with program voltage adjustment
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Application No.: US17021620Application Date: 2020-09-15
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Publication No.: US11600344B2Publication Date: 2023-03-07
- Inventor: Byoung In Joo
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2020-0042843 20200408
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C16/12 ; G11C16/08 ; G11C16/30 ; G11C16/26

Abstract:
Provided herein may be a memory device and a method of operating the memory device. The memory device includes an operation code generator configured to generate a program code and a verify code in response to a program control code and to output an operation code using the program code and the verify code, a verify counter configured to store a count value acquired by counting the number of verify operations that are performed depending on the verify code, a verify determiner configured to compare the count value with a reference value depending on the result of the verify operation and to generate the program control code to change a step voltage for raising a program voltage depending on the comparison result, and a voltage generator configured to generate the program voltage and a verify voltage depending on the operation code.
Public/Granted literature
- US20210319838A1 MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE Public/Granted day:2021-10-14
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