Invention Grant
- Patent Title: Plasma processing apparatus and control method
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Application No.: US16942145Application Date: 2020-07-29
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Publication No.: US11600475B2Publication Date: 2023-03-07
- Inventor: Taro Ikeda , Mikio Sato , Eiki Kamata
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Fenwick & West LLP
- Priority: JPJP2019-142193 20190801
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
A plasma processing apparatus includes a main container, one or more radio frequency antennas, a plurality of metal windows, and a plasma detector. The one or more radio frequency antennas are configured to generate inductively coupled plasma in a plasma generation region in the main container. The metal windows are disposed between the plasma generation region and the radio frequency antennas while being insulated from each other and from the main container. Further, a plasma detector is connected to each of the metal windows and configured to detect a plasma state.
Public/Granted literature
- US20210035787A1 PLASMA PROCESSING APPARATUS AND CONTROL METHOD Public/Granted day:2021-02-04
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