Invention Grant
- Patent Title: Source/drain structures and method of forming
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Application No.: US17218459Application Date: 2021-03-31
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Publication No.: US11600534B2Publication Date: 2023-03-07
- Inventor: Wei-Min Liu , Hsueh-Chang Sung , Li-Li Su , Yee-Chia Yeo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L29/08 ; H01L29/49 ; H01L29/78 ; H01L29/66
Abstract:
A semiconductor device includes a first device region and a second device region. The first device region includes a first source/drain region extending from a substrate and a first and a second pair of spacers. The first source/drain region extends between the first pair of spacers and the second pair of spacers. The first pair of spacers and the second pair of spacers have a first height. The second device region includes a second and a third source/drain region extending from the substrate and a third and a fourth pair of spacers. The third source/drain region is separate from the second source/drain region. The second source/drain region extends between the third pair of spacers. The third source/drain region extends between the fourth pair of spacers. The third pair of spacers and the fourth pair of spacers have a second height greater than the first height.
Public/Granted literature
- US20220319934A1 Source/Drain Structures and Method of Forming Public/Granted day:2022-10-06
Information query
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