- Patent Title: Semiconductor device and semiconductor device manufacturing method
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Application No.: US17163610Application Date: 2021-02-01
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Publication No.: US11600589B2Publication Date: 2023-03-07
- Inventor: Masanori Shindo
- Applicant: LAPIS SEMICONDUCTOR CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP Kanagawa
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: JPJP2020-017210 20200204
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/49 ; H01L21/48
Abstract:
A semiconductor device including a terminal that is formed using copper, that is electrically connected to a circuit element, and that includes a formation face formed with a silver-tin solder bump such that a nickel layer is interposed between the terminal and the solder bump, wherein the nickel layer is formed on a region corresponding to part of the formation face.
Public/Granted literature
- US20210242155A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2021-08-05
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