Invention Grant
- Patent Title: Electronic device including high electron mobility transistors and a resistor and a method of using the same
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Application No.: US16949735Application Date: 2020-11-12
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Publication No.: US11600611B2Publication Date: 2023-03-07
- Inventor: Jaume Roig-Guitart
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Abel Schillinger, LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/06 ; H01L29/778

Abstract:
An electronic device can include a drain terminal, a control terminal, and a source terminal, a first HEMT, and a second HEMT. The first HEMT can include a drain electrode coupled to the drain terminal, a gate electrode coupled to the first control terminal, and a source electrode coupled to the source terminal. The second HEMT can include a drain electrode, a gate electrode, and a source electrode. The drain electrode can be coupled to the drain terminal, and the source electrode can be coupled to the source terminal. In an embodiment, a resistor can be coupled between the gate and source electrodes of the second HEMT, and in another embodiment, the gate electrode of the second HEMT can electrically float. During or after a triggering event, the second HEMT can turn on temporarily to divert some of the charging from the triggering event into the second HEMT.
Public/Granted literature
- US20220149037A1 Electronic Device Including Transistors and a Method of Using the Same Public/Granted day:2022-05-12
Information query
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