Invention Grant
- Patent Title: Memory cell and memory array select transistor
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Application No.: US16740652Application Date: 2020-01-13
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Publication No.: US11600663B2Publication Date: 2023-03-07
- Inventor: Jin-Woo Han , Yuniarto Widjaja
- Applicant: Zeno Semiconductor, Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Zeno Semiconductor, Inc.
- Current Assignee: Zeno Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Law Office of Alan W. Cannon
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L27/11517 ; H01L27/22
Abstract:
A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) with increased on-state current obtained through a parasitic bipolar junction transistor (BJT) of the MOSFET. Methods of operating the MOSFET as a memory cell or a memory array select transistor are provided.
Public/Granted literature
- US20200227478A1 MEMORY CELL AND MEMORY ARRAY SELECT TRANSISTOR Public/Granted day:2020-07-16
Information query
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