Invention Grant
- Patent Title: Integrated circuit device including gate line
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Application No.: US17106971Application Date: 2020-11-30
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Publication No.: US11600694B2Publication Date: 2023-03-07
- Inventor: Juyoun Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2020-0077166 20200624
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/11

Abstract:
An integrated circuit device includes an active area extending in a first direction on a substrate and a gate line extending in a second direction intersecting with the first direction to intersect with the active area. The gate line comprises a first sidewall and a second sidewall opposite to each other. The first sidewall has a convex shape. The second sidewall has a concave shape.
Public/Granted literature
- US20210408232A1 INTEGRATED CIRCUIT DEVICE INCLUDING GATE LINE Public/Granted day:2021-12-30
Information query
IPC分类: