Invention Grant
- Patent Title: Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
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Application No.: US17334002Application Date: 2021-05-28
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Publication No.: US11600702B2Publication Date: 2023-03-07
- Inventor: Yasuyuki Kawada
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Agency: Rabin & Berdo, P.C.
- Priority: JPJP2020-118064 20200708
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L29/66 ; H01L29/51 ; H01L29/423

Abstract:
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, trenches, a gate insulating film, gate electrodes, and an interlayer insulating film. The gate insulating film is formed by performing nitriding and oxidation by at least two sessions of a heat treatment by a mixed gas containing nitric oxide and nitrogen, the gate insulating film being configured by a first gate insulating film that is a silicon nitride layer, a second gate insulating film that is a silicon oxide film, and a third gate insulating film that is a silicon oxide film having a nitrogen area density lower than that of the second gate insulating film.
Public/Granted literature
- US20220013641A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2022-01-13
Information query
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