Method for forming semiconductor structure with contact over source/drain structure

Invention Grant

US11600716B2 Method for forming semiconductor structure with contact over source/drain structure 有权

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Patent Title: Method for forming semiconductor structure with contact over source/drain structure
Application No.: US17107115

Application Date: 2020-11-30
Publication No.: US11600716B2

Publication Date: 2023-03-07
Inventor: Andrew Joseph Kelly , Yusuke Oniki
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Applicant Address: TW Hsinchu
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Current Assignee Address: TW Hsinchu
Agency: Birch, Stewart, Kolasch & Birch, LLP
Main IPC: H01L21/3213
IPC: H01L21/3213 ; H01L21/8234 ; H01L29/66 ; H01L29/417 ; H01L29/78 ; H01L29/08 ; B82Y10/00 ; H01L29/775 ; H01L29/06 ; H01L29/45

Method for forming semiconductor structure with contact over source/drain structure

Abstract:

Methods for manufacturing semiconductor structures are provided. The method for manufacturing the semiconductor structure includes forming a fin structure protruding from a substrate and forming a source/drain structure over the fin structure. The method for manufacturing a semiconductor structure further includes forming a metallic layer over the source/drain structure and forming an oxide film on a sidewall of the source/drain structure. In addition, the oxide film and the metallic layer are both in direct contact with the source/drain structure.

Public/Granted literature

US20210083078A1 METHOD FOR FORMING SEMICONDUCTOR STRUCTURE WITH CONTACT OVER SOURCE/DRAIN STRUCTURE Public/Granted day:2021-03-18

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）
H01L21/321	.......后处理
H01L21/3213	........对该层进行物理的或化学的腐蚀，例如由预沉积的外延层产生一个形成图形的层