Invention Grant
- Patent Title: Trench MOSFETs integrated with clamped diodes having trench field plate termination to avoid breakdown voltage degradation
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Application No.: US17716123Application Date: 2022-04-08
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Publication No.: US11600725B2Publication Date: 2023-03-07
- Inventor: Fu-Yuan Hsieh
- Applicant: NAMI MOS CO., LTD.
- Applicant Address: TW New Taipei
- Assignee: NAMI MOS CO., LTD.
- Current Assignee: NAMI MOS CO., LTD.
- Current Assignee Address: TW New Taipei
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/02 ; H01L29/40 ; H01L29/49 ; H01L29/866
Abstract:
A semiconductor power device having shielded gate structure in an active area and trench field plate termination surrounding the active area is disclosed. A Zener diode connected between drain metal and source metal or gate metal for functioning as a SD or GD clamp diode. Trench field plate termination surrounding active area wherein only cell array located will not cause BV degradation when SD or GD poly clamped diode integrated.
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Information query
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