- Patent Title: Quantum dot light-emitting diode and method of fabricating the same
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Application No.: US17150469Application Date: 2021-01-15
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Publication No.: US11600796B2Publication Date: 2023-03-07
- Inventor: Jin Jang , Christophe Avis , Jeong Gi Kim
- Applicant: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
- Applicant Address: KR Yongin-si
- Assignee: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
- Current Assignee: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
- Current Assignee Address: KR Yongin-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2018-0110935 20180917
- Main IPC: H01L51/56
- IPC: H01L51/56 ; H01L51/50 ; H01L51/00
Abstract:
Disclosed is a quantum dot light-emitting diode including a positive electrode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a negative electrode, wherein the hole injection layer is a p-type oxide semiconductor represented by Formula 1 below: Cu2Sn2-XS3—(GaX)2O3, [Formula 1] wherein X is greater than 0.2 and less than 1.5 (0.2
Public/Granted literature
- US20210210712A1 QUANTUM DOT LIGHT-EMITTING DIODE AND METHOD OF FABRICATING THE SAME Public/Granted day:2021-07-08
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