Invention Grant
- Patent Title: Production method for producing silicon clathrate II
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Application No.: US17002408Application Date: 2020-08-25
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Publication No.: US11600817B2Publication Date: 2023-03-07
- Inventor: Masanori Harata , Jun Yoshida , Kazuhiro Suzuki , Daichi Kosaka , Shinji Nakanishi
- Applicant: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI , TOYOTA JIDOSHA KABUSHIKI KAISHA
- Applicant Address: JP Kariya; JP Toyota
- Assignee: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI,TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI,TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee Address: JP Kariya; JP Toyota
- Agency: Sughrue Mion, PLLC
- Priority: JPJP2019-154849 20190827
- Main IPC: H01M4/38
- IPC: H01M4/38 ; H01M10/0525 ; H01M10/058 ; C01B33/037 ; C22C24/00 ; H01M4/02

Abstract:
Provided is a novel production method for producing silicon clathrate II. In the production method for producing silicon clathrate II, in a reaction system in which a Na—Si alloy containing Na and Si and an Na getter agent coexist so as not to be in contact with each other, the Na—Si alloy is heated and Na evaporated from the Na—Si alloy is thus caused to react with the Na getter agent to reduce an amount of Na in the Na—Si alloy.
Public/Granted literature
- US20210066714A1 PRODUCTION METHOD FOR PRODUCING SILICON CLATHRATE II Public/Granted day:2021-03-04
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