Invention Grant
- Patent Title: Semiconductor solid state battery
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Application No.: US16437459Application Date: 2019-06-11
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Publication No.: US11600866B2Publication Date: 2023-03-07
- Inventor: Atsuya Sasaki , Akito Sasaki , Yoshinori Kataoka , Hideaki Hirabayashi , Shuichi Saito
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA MATERIALS CO., LTD.
- Applicant Address: JP Tokyo; JP Yokohama
- Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA MATERIALS CO., LTD.
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA MATERIALS CO., LTD.
- Current Assignee Address: JP Tokyo; JP Yokohama
- Agency: Burr Patent Law, PLLC
- Priority: JPJP2016-247739 20161221
- Main IPC: H01M10/38
- IPC: H01M10/38 ; H01M10/02 ; H01L49/00

Abstract:
A semiconductor solid state battery has an insulating layer provided between an N-type semiconductor and a P-type semiconductor. The first insulating layer preferably has a thickness of 3 nm to 30 μm and a dielectric constant of 10 or less. The first insulating layer preferably has a density of 60% or more of a bulk body. The semiconductor layer preferably has a capture level introduced. The semiconductor solid state battery can eliminate leakage of an electrolyte solution.
Public/Granted literature
- US20190296401A1 SEMICONDUCTOR SOLID STATE BATTERY Public/Granted day:2019-09-26
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