Invention Grant
- Patent Title: Bulk-acoustic wave resonator
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Application No.: US16356333Application Date: 2019-03-18
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Publication No.: US11601110B2Publication Date: 2023-03-07
- Inventor: Ran Hee Shin , Tae Kyung Lee , Je Hong Kyoung , Jin Suk Son , Hwa Sun Lee , Sung Sun Kim
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2018-0085889 20180724
- Main IPC: H03H9/13
- IPC: H03H9/13 ; H01L41/047 ; H01L41/187 ; H03H9/02 ; H01L41/316 ; H03H9/17 ; C22C21/00 ; H03H3/02 ; H03H9/54

Abstract:
A bulk-acoustic wave resonator includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer, of which at least a portion is disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and a passivation layer disposed to cover the first electrode and the second electrode. Either one or both of the first electrode and the second electrode includes an aluminum alloy layer. Either one or both of the piezoelectric layer and the passivation layer has aluminum nitride, or aluminum nitride added with a doping material, having a ratio of an out-of-plane lattice constant “c” to an in-plane lattice constant “a” (c/a) of less than 1.58.
Public/Granted literature
- US20200036359A1 BULK-ACOUSTIC WAVE RESONATOR Public/Granted day:2020-01-30
Information query
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