- Patent Title: Piezoelectric MEMS resonators based on porous silicon technologies
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Application No.: US16914079Application Date: 2020-06-26
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Publication No.: US11601111B2Publication Date: 2023-03-07
- Inventor: Xiang Zheng Tu
- Applicant: Xiang Zheng Tu
- Applicant Address: US CA San Jose
- Assignee: Xiang Zheng Tu
- Current Assignee: Xiang Zheng Tu
- Current Assignee Address: US CA San Jose
- Agency: JW Law Group
- Agent James M. Wu
- Main IPC: H03H9/17
- IPC: H03H9/17 ; H03H3/02 ; H03H9/02 ; H03H9/13 ; H03H3/007 ; H03H9/24 ; H03H9/15

Abstract:
A piezoelectric MEMS resonator is provided. The resonator comprises a single crystal silicon microstructure suspended over a buried cavity created in a silicon substrate and a piezoelectric resonance structure located on the microstructure. The resonator is designed and fabricated based on porous silicon related technologies including selective formation and etching of porous silicon in silicon substrate, porous silicon as scarified material for surface micromachining and porous silicon as substrate for single crystal silicon epitaxial growth. All these porous silicon related technologies are compatible with CMOS technologies and can be conducted in a standard CMOS technologies platform.
Public/Granted literature
- US20210409000A1 Piezoelectric MEMS Resonators based on Porous Silicon Technologies Public/Granted day:2021-12-30
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