Invention Grant
- Patent Title: Low power cryo-CMOS circuits with non-volatile threshold voltage offset compensation
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Application No.: US17744107Application Date: 2022-05-13
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Publication No.: US11601128B2Publication Date: 2023-03-07
- Inventor: David J. Reilly
- Applicant: Microsoft Technology Licensing, LLC
- Applicant Address: US WA Redmond
- Assignee: Microsoft Technology Licensing, LLC
- Current Assignee: Microsoft Technology Licensing, LLC
- Current Assignee Address: US WA Redmond
- Agency: Singh Law, PLLC
- Agent Ranjeev Singh
- Main IPC: H03K19/19
- IPC: H03K19/19 ; H03K19/195 ; G06N10/00 ; G11C11/56 ; H01L27/11524 ; H01L27/18

Abstract:
Systems and methods related to low power cryo-CMOS circuits with non-volatile threshold voltage offset compensation are provided. A system includes a plurality of devices configured to operate in a cryogenic environment, where a first distribution of a threshold voltage associated with the plurality of devices has a first value indicative of a measure of spread of the threshold voltage. The system further includes control logic, coupled to each of the plurality of devices, configured to modify a threshold voltage associated with each of the plurality of devices such that the first distribution is changed to a second distribution having a second value of the measure of spread of the threshold voltage representing a lower variation among threshold voltages of the plurality of devices.
Public/Granted literature
- US20220278686A1 LOW POWER CRYO-CMOS CIRCUITS WITH NON-VOLATILE THRESHOLD VOLTAGE OFFSET COMPENSATION Public/Granted day:2022-09-01
Information query
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