Invention Grant
- Patent Title: Parameter calibration method and semiconductor device utilizing the same
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Application No.: US17494797Application Date: 2021-10-05
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Publication No.: US11601208B2Publication Date: 2023-03-07
- Inventor: Yun-Tse Chen , Yan-Guei Chen , Shi-Ming Lu , Liang-Wei Huang
- Applicant: Realtek Semiconductor Corp.
- Applicant Address: TW HsinChu
- Assignee: Realtek Semiconductor Corp.
- Current Assignee: Realtek Semiconductor Corp.
- Current Assignee Address: TW HsinChu
- Agent Winston Hsu
- Priority: TW109144001 20201214
- Main IPC: H04B7/00
- IPC: H04B7/00 ; H04B17/21

Abstract:
Parameter calibration method for calibrating multiple parameters corresponding to multiple electronic components to be calibrated in a circuit, including steps: (A) turning off all of the electronic components to be calibrated and selecting a first electronic component from the electronic components to be calibrated as an electronic component being calibrated; (B) turning on the electronic component being calibrated and performing a calibration procedure on the electronic component being calibrated to determine a setting value of a parameter corresponding to the electronic component being calibrated; and (C) selecting a second electronic component from the electronic components to be calibrated as the electronic component being calibrated and performing step (B). Step (C) is repeatedly performed until all of the electronic components to be calibrated have become electronic components that have been calibrated, and when performing step (C), the electronic component(s) that have been calibrated are kept being turned on.
Public/Granted literature
- US20220190937A1 Parameter calibration method and semiconductor device utilizing the same Public/Granted day:2022-06-16
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