- Patent Title: Error correction in row hammer mitigation and target row refresh
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Application No.: US17693990Application Date: 2022-03-14
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Publication No.: US11604694B2Publication Date: 2023-03-14
- Inventor: Randall J. Rooney , Matthew A. Prather
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; G11C29/44 ; G11C11/406 ; G11C29/42 ; G11C29/04

Abstract:
Methods, systems, and apparatuses for memory (e.g., DRAM) having an error check and scrub (ECS) procedure in conjunction with refresh operations are described. While a refresh operation reads the code words of a memory row, ECS procedures may be performed on some of the sensed code words. When the write portion of the refresh begins, a code word discovered to have errors may be corrected before it is written back to the memory row. The ECS procedure can be incremental across refresh operations, beginning, for example, each ECS at the code word where the pervious ECS for that row left off. The ECS procedure can include an out-of-order (OOO) procedure where ECS is performed more often for certain identified code words.
Public/Granted literature
- US20220197740A1 ERROR CORRECTION IN ROW HAMMER MITIGATION AND TARGET ROW REFRESH Public/Granted day:2022-06-23
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