Invention Grant
- Patent Title: Semiconductor device having a test circuit
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Application No.: US17364829Application Date: 2021-06-30
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Publication No.: US11605419B2Publication Date: 2023-03-14
- Inventor: Satoshi Morishita , Yoshifumi Mochida
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/408 ; G11C29/12 ; G11C11/4091

Abstract:
Disclosed herein is an apparatus that includes a plurality of memory sections each including a plurality of word lines, a predecoder circuit configured to generate predecoded section address signals to select one of the plurality of memory sections and predecoded word line address signals to select one of the word lines included in a selected one of the plurality of memory sections based on a row address, and a section address control circuit configured to retain the predecoded section address signals regardless of an update of the row address in a test operation mode.
Public/Granted literature
- US20230005520A1 SEMICONDUCTOR DEVICE HAVING A TEST CIRCUIT Public/Granted day:2023-01-05
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