Invention Grant
- Patent Title: Memory circuit configuration
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Application No.: US17332753Application Date: 2021-05-27
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Publication No.: US11605422B2Publication Date: 2023-03-14
- Inventor: Shih-Lien Linus Lu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C11/418 ; G11C11/419 ; G11C8/10 ; G11C7/08 ; G11C11/412

Abstract:
A circuit includes a memory array, a control circuit configured to identify an address of a first row containing a weak cell, and store corresponding address information in a storage device, and an address decoding circuit including NAND pairs, inverter pairs, and a logic tree. Each NAND pair receives corresponding bits of the address information and the address of the first row and corresponding inverted bits of the address information and the address of the first row inverted by corresponding inverter pairs, and output terminals of the NAND pairs are connected to the logic tree. The logic tree matches the address information with the address of the first row based on output logic levels from the NAND pairs and, in response to the corresponding address information matching the address of the first row, activates a second row of the memory array simultaneously with the first row being activated.
Public/Granted literature
- US20210287738A1 MEMORY CIRCUIT CONFIGURATION Public/Granted day:2021-09-16
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