A storage device includes a memory device including a plurality of memory blocks including a plurality of memory cells respectively connected to a plurality of word lines which are vertically stacked, and a memory controller configured to control the memory device to determine an attribute of a plurality of write data corresponding to a write request in response to the write request provided from a host, set a program voltage used for a program operation of storing write data having the same attribute of the write data among the plurality of write data in the same memory block based on a lookup table including the attribute of the write data and program information on the program voltage according to positions of the plurality of word lines, and perform the program operation according to the set program voltage.