Invention Grant
- Patent Title: Diamond semiconductor system and method
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Application No.: US17329035Application Date: 2021-05-24
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Publication No.: US11605541B2Publication Date: 2023-03-14
- Inventor: Adam Khan
- Applicant: AKHAN Semiconductor, Inc.
- Applicant Address: US IL Gurnee
- Assignee: AKHAN Semiconductor, Inc.
- Current Assignee: AKHAN Semiconductor, Inc.
- Current Assignee Address: US IL Gurnee
- Agency: Stevens Law Group
- Agent David R. Stevens
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/04 ; H01L21/768 ; H01L29/16 ; H01L29/66 ; H01L29/868 ; H01L21/02 ; H01L21/285 ; H01L21/324 ; H01L29/36
Abstract:
Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.
Public/Granted literature
- US20210407805A1 Diamond Semiconductor System And Method Public/Granted day:2021-12-30
Information query
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