Invention Grant
- Patent Title: Trench filling through reflowing filling material
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Application No.: US16939718Application Date: 2020-07-27
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Publication No.: US11605555B2Publication Date: 2023-03-14
- Inventor: Wen-Yen Chen , Li-Ting Wang , Wan-Chen Hsieh , Bo-Cyuan Lu , Tai-Chun Huang , Huicheng Chang , Yee-Chia Yeo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/768 ; H01L21/02 ; H01L21/764

Abstract:
A method includes forming a first protruding fin and a second protruding fin over a base structure, with a trench located between the first protruding fin and the second protruding fin, depositing a trench-filling material extending into the trench, and performing a laser reflow process on the trench-filling material. In the reflow process, the trench-filling material has a temperature higher than a first melting point of the trench-filling material, and lower than a second melting point of the first protruding fin and the second protruding fin. After the laser reflow process, the trench-filling material is solidified. The method further includes patterning the trench-filling material, with a remaining portion of the trench-filling material forming a part of a gate stack, and forming a source/drain region on a side of the gate stack.
Public/Granted literature
- US20210327749A1 Trench Filling Through Reflowing Filling Material Public/Granted day:2021-10-21
Information query
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