Invention Grant
- Patent Title: Semiconductor device having passivation layer and method of manufacturing the same
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Application No.: US16739913Application Date: 2020-01-10
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Publication No.: US11605579B2Publication Date: 2023-03-14
- Inventor: Jing-Cheng Lin , Li-Hui Cheng , Po-Hao Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT Law
- Agent Anthony King
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/31 ; H01L23/00 ; H01L25/065 ; H01L25/16 ; H01L21/48 ; H01L21/56

Abstract:
A semiconductor device includes a substrate, an electrical conductor and a passivation layer. The substrate includes a first surface. The electric conductor is over the first surface of the substrate. The passivation layer is over the first surface of the substrate. The passivation layer includes a first part and a second part. In some embodiments, the first part is in contact with an edge of the electrical conductor, the second part is connected to the first part and apart from the edge of the electrical conductor, and the first part of the passivation layer has curved surface.
Public/Granted literature
- US20200152560A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-05-14
Information query
IPC分类: