Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17391283Application Date: 2021-08-02
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Publication No.: US11605582B2Publication Date: 2023-03-14
- Inventor: Takahiro Mitsumoto , Akira Hirao , Motohito Hori
- Applicant: Fuji Electric Co., Ltd.
- Applicant Address: JP Kanagawa
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP Kanagawa
- Agency: Chen Yoshimura LLP
- Priority: JPJP2020-150729 20200908
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/373 ; H01L23/538 ; H01L25/07 ; H01L25/18

Abstract:
A semiconductor device includes a wiring board that includes a first insulating layer, a first conductive layer arranged over the first insulating layer, a second conductive layer arranged under the first insulating layer, the wiring board further including a magnetic layer that is arranged between the first insulating layer and the first or second conductive layer and that has a higher specific magnetic permeability than the first and second conductive layers, and a carbon layer that is arranged between the first insulating layer and the first or second conductive layer and that has a higher thermal conductivity in a planary direction than the first and second conductive layers; a semiconductor chip electrically connected to the first and second conductive layers; and an insulating circuit board arranged separately from the wiring board and that has the semiconductor chip mounted thereon.
Public/Granted literature
- US20220077044A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-03-10
Information query
IPC分类: