Invention Grant
- Patent Title: Packages with local high-density routing region embedded within an insulating layer
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Application No.: US16994398Application Date: 2020-08-14
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Publication No.: US11605595B2Publication Date: 2023-03-14
- Inventor: Aniket Patil , Hong Bok We , Kuiwon Kang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/48
Abstract:
Disclosed is an apparatus and methods for making same. The apparatus includes a first insulating layer, a first metal layer disposed on a surface of the first insulating layer, and a metallization structure embedded in the first insulating layer. The metallization structure occupies only a portion of a volume of the first insulating layer. The metallization structure has a line density greater than a line density of the first metal layer.
Information query
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