Invention Grant
- Patent Title: Semiconductor device having a thin semiconductor die
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Application No.: US17071022Application Date: 2020-10-15
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Publication No.: US11605599B2Publication Date: 2023-03-14
- Inventor: Christian Gruber , Benjamin Bernard , Tobias Polster , Carsten von Koblinski
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: EP19208697 20191112
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L23/00 ; H01L21/768 ; H01L21/78
Abstract:
A semiconductor device includes a semiconductor die having a front side surface, a backside surface opposite the front side surface and side faces. A backside metallization layer is deposited over the backside surface and projects laterally outwards beyond the side faces. A side face protection layer covers the side faces.
Public/Granted literature
- US20210143108A1 Semiconductor Device Having a Thin Semiconductor Die Public/Granted day:2021-05-13
Information query
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