Invention Grant
- Patent Title: Semiconductor package and method of forming the same
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Application No.: US17233565Application Date: 2021-04-19
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Publication No.: US11605601B2Publication Date: 2023-03-14
- Inventor: Ching-Wen Chen , Hung-Jui Kuo , Ming-Che Ho
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31 ; H01L23/538 ; H01L21/48 ; H01L21/56
Abstract:
A semiconductor package and a method of forming the same are disclosed. A method of forming a semiconductor package includes the following operations. A polymer layer is formed over a die. A metal feature is formed in the polymer layer. An argon-containing plasma treatment is performed to the polymer layer and the metal feature.
Public/Granted literature
- US20210242140A1 SEMICONDUCTOR PACKAGE AND METHOD OF FORMING THE SAME Public/Granted day:2021-08-05
Information query
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