The present disclosure provides a redistribution layer (RDL) structure, a semiconductor device and manufacturing method thereof. The semiconductor device comprising an RDL structure that may include a substrate, a first conductive layer, a reinforcement layer and, and a second conductive layer. The first conductive layer may be formed on the substrate and has a first bond pad area. The reinforcement layer may be formed on a surface of the first conductive layer facing away from the substrate and located in the first bond pad area. The second conductive layer may be formed on the reinforcement layer and an area of the first conductive layer not covered by the reinforcement layer. The reinforcement layer has a material strength greater than those of the first conductive layer and the second conductive layer.