The present application provides a semiconductor device. The semiconductor device includes a bonding pad disposed over a semiconductor substrate; a first spacer disposed over a top surface of the bonding pad; a second spacer disposed over a sidewall of the bonding pad; a dielectric layer between the bonding pad and the semiconductor substrate. The dielectric layer includes silicon-rich oxide; and a conductive bump disposed over the first passivation layer. The conductive bump is electrically connected to a source/drain (S/D) region in the semiconductor substrate through the bonding pad. The semiconductor device also includes a dielectric liner disposed between the first spacer and the bonding pad; and a first passivation layer covering the second spacer, wherein the dielectric liner is L-shaped, and the first spacer is separated from the bonding pad by the dielectric liner.