Invention Grant
- Patent Title: Semiconductor device and methods of manufacture
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Application No.: US17206442Application Date: 2021-03-19
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Publication No.: US11605607B2Publication Date: 2023-03-14
- Inventor: Hung-Chun Cho , Hung-Jui Kuo , Yu-Hsiang Hu , Sih-Hao Liao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/065 ; H01L25/00 ; H01L25/18 ; H01L23/29 ; H01L21/56

Abstract:
In an embodiment, a method includes forming a conductive feature adjacent to a substrate; treating the conductive feature with a protective material, the protective material comprising an inorganic core with an organic coating around the inorganic core, the treating the conductive feature comprising forming a protective layer over the conductive feature; and forming an encapsulant around the conductive feature and the protective layer. In another embodiment, the method further includes, before forming the encapsulant, rinsing the protective layer with water. In another embodiment, the protective layer is selectively formed over the conductive feature.
Public/Granted literature
- US20220302065A1 Semiconductor Device and Methods of Manufacture Public/Granted day:2022-09-22
Information query
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