Invention Grant
- Patent Title: Depth-adaptive mechanism for ball grid array dipping
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Application No.: US17488797Application Date: 2021-09-29
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Publication No.: US11605610B2Publication Date: 2023-03-14
- Inventor: Fan Li
- Applicant: Google LLC
- Applicant Address: US CA Mountain View
- Assignee: Google LLC
- Current Assignee: Google LLC
- Current Assignee Address: US CA Mountain View
- Agency: Colby Nipper PLLC
- Main IPC: B23K1/00
- IPC: B23K1/00 ; H01L23/00 ; B23K1/20

Abstract:
This document describes systems and techniques of a depth-adaptive mechanism for ball grid array dipping. In an aspect, a depth-adaptive mechanism having a tensioned mesh is positioned in a reservoir filled with flux. When solder balls of an integrated circuit component are dipped into the reservoir of flux, the solder balls are pressed up against the tensioned mesh. The tensioned mesh is configured to, first, elastically deform under the downward force applied by the solder balls and, second, provide an equal and opposite pushing force in order to facilitate solder ball extraction. In so doing, the solder balls of an integrated circuit component can be more easily extracted from flux when deep ball grid array dipping is performed.
Public/Granted literature
- US20220020719A1 Depth-Adaptive Mechanism for Ball Grid Array Dipping Public/Granted day:2022-01-20
Information query
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