Invention Grant
- Patent Title: Integrated III-nitride and silicon device
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Application No.: US13945276Application Date: 2013-07-18
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Publication No.: US11605628B2Publication Date: 2023-03-14
- Inventor: Michael A. Briere
- Applicant: Infineon Technologies Americas Corp.
- Applicant Address: US CA El Segundo
- Assignee: Infineon Technologies Americas Corp.
- Current Assignee: Infineon Technologies Americas Corp.
- Current Assignee Address: US CA El Segundo
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/04 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/778 ; H01L21/8258 ; H01L29/20
Abstract:
A III-nitride device that includes a silicon body having formed therein an integrated circuit and a III-nitride device formed over a surface of the silicon body.
Public/Granted literature
- US20130299877A1 Integrated III-Nitride and Silicon Device Public/Granted day:2013-11-14
Information query
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