- Patent Title: Semiconductor storage device and method of manufacturing the same
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Application No.: US17350161Application Date: 2021-06-17
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Publication No.: US11605646B2Publication Date: 2023-03-14
- Inventor: Kazuhiro Nojima , Kojiro Shimizu
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JPJP2018-175669 20180920
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11573 ; H01L27/1157 ; G11C5/06 ; H01L27/11565 ; H01L27/11575

Abstract:
A semiconductor storage device includes a logic circuit formed on a substrate, a first area formed on the logic circuit and has a plurality of first insulating layers and a plurality of conductive layers alternately stacked in a first direction, a plurality of memory pillars MP which extend in the first area in the first direction, a second area which is formed on the logic circuit and has the plurality of first insulating layers 33 and a plurality of second insulating layers alternately stacked in the first direction, and a contact plug CP1 which extends in the second area in the first direction and is connected to the logic circuit.
Public/Granted literature
- US20210313350A1 SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-10-07
Information query
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