Invention Grant
- Patent Title: Semiconductor apparatus and method for producing semiconductor apparatus
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Application No.: US17076678Application Date: 2020-10-21
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Publication No.: US11605665B2Publication Date: 2023-03-14
- Inventor: Katsunori Hirota , Tsutomu Tange , Takuya Hara
- Applicant: CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: CANON KABUSHIKI KAISHA
- Current Assignee: CANON KABUSHIKI KAISHA
- Current Assignee Address: JP Tokyo
- Agency: Canon U.S.A., Inc., IP Division
- Priority: JPJP2019-194803 20191025,JPJP2020-132817 20200805
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A semiconductor apparatus includes a semiconductor layer that includes a photoelectric conversion unit disposed between a front surface and a back surface and a transistor disposed at the front surface, and a dielectric film in contact with the back surface, wherein the semiconductor layer includes a region extending 100 nm from the back surface, the region having boron concentrations whose maximum value is more than 1×1020 [atoms/cm3].
Public/Granted literature
- US20210126026A1 SEMICONDUCTOR APPARATUS AND METHOD FOR PRODUCING SEMICONDUCTOR APPARATUS Public/Granted day:2021-04-29
Information query
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