A silicon carbide MOSFET includes first and second source regions respectively disposed in the first and second well regions. Each of the first and second source regions extends up to a top surface of the substrate. First and second channel regions of the respective first and second well regions laterally separate the first and second source regions from a JFET region by a channel length. The first and second channel regions extend up to the top surface. The first and second channel regions are each arranged in a wave-shaped pattern at the top surface of the substrate. The wave-shaped pattern extends in first and second lateral directions. In an on-state, current flows laterally from the first and second source regions to the JFET region, and then in a vertical direction down through an extended drain region to the drain region.