Invention Grant
- Patent Title: Semiconductor structure and fabrication method thereof
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Application No.: US16993693Application Date: 2020-08-14
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Publication No.: US11605735B2Publication Date: 2023-03-14
- Inventor: Fei Zhou
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai; CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai; CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: CN201910753684.5 20190815
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/739
Abstract:
Semiconductor structure and a method for fabricating the semiconductor structure are provided. The semiconductor structure includes a substrate, a doped source layer formed in the substrate; a channel pillar formed on the doped source layer; a gate structure formed on the sidewall surface of the channel pillar; a first contact layer, having a first thickness and formed at the surface of the doped source layer; and a second contact layer having a second thickness and formed on the top surface of the channel pillar. The first thickness is greater than the second thickness.
Public/Granted literature
- US20210050440A1 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2021-02-18
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