Invention Grant
- Patent Title: Transistor, integrated circuit, and manufacturing method of transistor
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Application No.: US17099800Application Date: 2020-11-17
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Publication No.: US11605740B2Publication Date: 2023-03-14
- Inventor: Marcus Johannes Henricus Van Dal
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/41 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L27/12 ; H01L27/22 ; H01L27/24
Abstract:
A transistor includes a first gate structure, a channel layer, and source/drain contacts. The first gate structure includes nanosheets. The channel layer is over the first gate structure. A portion of the channel layer wraps around the nanosheets of the first gate structure. The source/drain contacts are aside the nanosheets. The source/drain contacts are electrically connected to the channel layer.
Public/Granted literature
- US20210376162A1 TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR Public/Granted day:2021-12-02
Information query
IPC分类:
