Invention Grant
- Patent Title: Photodetector based on PtSe2 and silicon nanopillar array and preparation method thereof
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Application No.: US17505656Application Date: 2021-10-20
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Publication No.: US11605743B2Publication Date: 2023-03-14
- Inventor: Huan Liu , Yuxuan Du , Jinmei Jia , Jijie Zhao , Shuai Wen , Minyu Bai , Fei Xie , Wanpeng Xie , Mei Yang , Jiayuan Wu , Weiguo Liu
- Applicant: Xi'an Technological University
- Applicant Address: CN Shaanxi
- Assignee: Xi'an Technological University
- Current Assignee: Xi'an Technological University
- Current Assignee Address: CN Shaanxi
- Priority: CN202110062494.6 20210118
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L31/18 ; H01L31/0352 ; H01L31/109 ; C23C16/30 ; C23C14/35

Abstract:
A photodetector based on PtSe2 and a silicon nanopillar array includes a PMMA light-transmitting protective layer, a graphene transparent top electrode, a silicon nanopillar array structure coated with few-layer PtSe2, and metal electrodes of the graphene transparent top electrode and the silicon nanopillar array structure. A method for preparing the photodetector includes steps of: preparing graphene with a CVD method; preparing a silicon nanopillar array structure through dry etching; coating few-layer PtSe2 on surfaces of the silicon nano-pillar array structure through laser interference enhanced induction CVD; preparing graphene transparent top electrode; and magnetron-sputtering metal electrodes. The photodetector prepared by the present invention has a detection range from visible light to near-infrared wavebands. The silicon nanopillar array structure enhances light absorption of the detector, so that the detector has high sensitivity, simple structure and strong practicability.
Information query
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