A semiconductor light-emitting element includes: an n-type contact layer; an n-side inserted layer provided on a first upper surface of the n-type contact layer, made of an AlGaN-based semiconductor material, and having a thickness equal to or smaller than 5 nm; an n-type clad layer provided on the n-side inserted layer; an active layer provided on the n-type clad layer and including a well layer and a barrier layer made of an AlGaN-based semiconductor material; a p-type clad layer provided on the active layer; a p-side inserted layer provided on the p-type clad layer, made of an AlGaN-based semiconductor material, and having a thickness equal to or smaller than 5 nm; and a p-type contact layer provided on the p-side inserted layer. An AlN composition of each of the n-side and p-side inserted layers is higher than an AlN composition of the barrier layer.