Invention Grant
- Patent Title: Hall effect sensor with low offset and high level of stability
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Application No.: US16784950Application Date: 2020-02-07
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Publication No.: US11605778B2Publication Date: 2023-03-14
- Inventor: David Daughton , Patrick Gleeson , Bo-Kuai Lai , Daniel Hoy
- Applicant: Lake Shore Cryotronics, Inc.
- Applicant Address: US OH Westerville
- Assignee: Lake Shore Cryotronics, Inc.
- Current Assignee: Lake Shore Cryotronics, Inc.
- Current Assignee Address: US OH Westerville
- Agency: Calfee, Halter & Griswold LLP
- Main IPC: H01L43/06
- IPC: H01L43/06 ; H01L43/10 ; H01L43/14 ; H01L43/04

Abstract:
A magnetic field magnetic field sensor and method of making the sensor. The sensor and method of making the sensor may comprise a material or structure that prevents the admission of light in certain wavelengths to enhance the stability of the magnetic field sensor over a period of time. The sensor and method of making the sensor may comprise an adsorption prevention layer which protects the semiconductor portion of the magnetic. The sensor may also comprise an insulating layer formed between semiconductor layers and a substrate layer.
Public/Granted literature
- US20200259073A1 HALL EFFECT SENSOR WITH LOW OFFSET AND HIGH LEVEL OF STABILITY Public/Granted day:2020-08-13
Information query
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