Invention Grant
- Patent Title: Method for making transition metal dichalcogenide crystal
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Application No.: US17328227Application Date: 2021-05-24
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Publication No.: US11608267B2Publication Date: 2023-03-21
- Inventor: Hao Li , Yang Wu , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing; TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing; TW New Taipei
- Agency: ScienBiziP, P.C.
- Priority: CN202010763310.4 20200731
- Main IPC: C30B25/08
- IPC: C30B25/08 ; C01B19/00 ; C30B29/46

Abstract:
A method for making a transition metal dichalcogenide crystal having a chemical formula represented as MX2 is provided, wherein M represents a central transition metal element, and X represents a chalcogen element. The method includes providing a MX2 polycrystalline powder, a MX2 seed crystal, and a transport medium. The MX2 polycrystalline powder and the transport medium are placed in a first reaction chamber. The first reaction chamber and the MX2 seed crystal are placed in a second reaction chamber having a source end and a deposition end opposite to the source end. The first reaction chamber is placed at the source end, and the MX2 seed crystal is placed at the deposition end.
Public/Granted literature
- US20220033261A1 METHOD FOR MAKING TRANSITION METAL DICHALCOGENIDE CRYSTAL Public/Granted day:2022-02-03
Information query
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