Invention Grant
- Patent Title: Pressure sensor
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Application No.: US17156832Application Date: 2021-01-25
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Publication No.: US11609139B2Publication Date: 2023-03-21
- Inventor: Tomohisa Tokuda , Kouji Yuuki , Tatsuo Tanaka
- Applicant: Azbil Corporation
- Applicant Address: JP Tokyo
- Assignee: Azbil Corporation
- Current Assignee: Azbil Corporation
- Current Assignee Address: JP Tokyo
- Priority: JPJP2020-013753 20200130
- Main IPC: G01L9/00
- IPC: G01L9/00

Abstract:
The present disclosure enables measurement with satisfactory sensitivity in a low pressure range, and thus accurate measurement in a wider pressure range, by providing a pressure sensor that includes a diaphragm layer and a pressure receiving region formed in the diaphragm layer. In addition, the pressure sensor includes a first piezostrictive element, a second piezostrictive element, a third piezostrictive element, and a fourth piezostrictive element. In addition, the pressure sensor includes a first magnetostrictive element, a second magnetostrictive element, a third magnetostrictive element, and a fourth magnetostrictive element.
Public/Granted literature
- US20210239555A1 PRESSURE SENSOR Public/Granted day:2021-08-05
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