Invention Grant
- Patent Title: Test device
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Application No.: US17041871Application Date: 2019-05-22
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Publication No.: US11609245B2Publication Date: 2023-03-21
- Inventor: Dong-hoon Park , Jae-hwan Jeong
- Applicant: LEENO INDUSTRIAL INC.
- Applicant Address: KR Busan
- Assignee: LEENO INDUSTRIAL INC.
- Current Assignee: LEENO INDUSTRIAL INC.
- Current Assignee Address: KR Busan
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2018-0059911 20180525
- International Application: PCT/KR2019/006140 WO 20190522
- International Announcement: WO2019/225967 WO 20191128
- Main IPC: G01R1/04
- IPC: G01R1/04 ; G01R1/067 ; G01R1/073 ; G01R1/18 ; G01R3/00 ; G01R31/28

Abstract:
Disclosed is a test device for testing a high-frequency and high-speed semiconductor. The test device includes a probe supporting block formed with a tube accommodating portion along a test direction; a conductive shield tube accommodated in the tube accommodating portion; and a probe accommodated and supported in the shield tube without contact, the tube accommodating portion including a conductive contact portion for transmitting a ground signal to the shield tube. When a high-frequency and high-speed semiconductor or the like subject is tested, the test device easily and inexpensively prevents crosstalk between the adjacent signal probes and improves impedance characteristic.
Public/Granted literature
- US20210132114A1 TEST DEVICE Public/Granted day:2021-05-06
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