Invention Grant
- Patent Title: Failure pattern obtaining method and apparatus
-
Application No.: US17389594Application Date: 2021-07-30
-
Publication No.: US11609263B2Publication Date: 2023-03-21
- Inventor: Chiasheng Lin
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN202010730179.1 20200727
- Main IPC: G01R31/28
- IPC: G01R31/28 ; G01R31/3183 ; G06T7/00

Abstract:
A failure pattern obtaining method and apparatus are provided. The method includes that: a chip test result picture for a wafer is obtained, the chip test result picture being marked with a plurality of failure test points; a vector for every two points among all failure test points is calculated; a plurality of failure test points having a same vector are designated as a same group; a plurality of pending failure patterns are separated from each of groups; a failure pattern is obtained based on the plurality of the pending failure patterns.
Public/Granted literature
- US20220026484A1 FAILURE PATTERN OBTAINING METHOD AND APPARATUS Public/Granted day:2022-01-27
Information query