A TFT is provided that has a semiconductor layer in which one source drain region, one LDD region, a channel region, another LDD region, and a first portion of another source drain region extend along a first direction at a position overlapping a scanning line, and a second portion of the other source drain region extends along a second direction at a position overlapping a data line, a light shielding wall is disposed along the one LDD region or the other LDD region extending along the first direction, a substrate has a recessed portion in a region overlapping the light shielding wall, and a part of the light shielding wall is disposed along a side surface and a bottom surface of the recessed portion.