Invention Grant
- Patent Title: Formation failure resilient neuromorphic device
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Application No.: US16557110Application Date: 2019-08-30
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Publication No.: US11610101B2Publication Date: 2023-03-21
- Inventor: Youngseok Kim , Jungwook Choi , Seyoung Kim , Chun-Chen Yeh
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Daniel Yeates
- Main IPC: G06N3/063
- IPC: G06N3/063 ; G06F17/18 ; G06F7/58 ; G06N3/082

Abstract:
A neuromorphic device includes a plurality of first control lines, a plurality of second control lines and a matrix of resistive processing unit cells. Each resistive processing unit cell is electrically connected with one of the first control lines and one of the second control lines. A given resistive processing unit cell includes a first resistive device and a second resistive device. The first resistive device is a positively weighted resistive device and the second resistive device is a negatively weighted resistive device.
Public/Granted literature
- US20210064974A1 FORMATION FAILURE RESILIENT NEUROMORPHIC DEVICE Public/Granted day:2021-03-04
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