A slow wave inductive structure includes a first substrate. The slow wave inductive structure further includes a first conductive winding over the first substrate. The slow wave inductive structure further includes a second substrate over the first substrate, wherein a distance between the first conductive winding and the second substrate ranges from about 1 micron (μm) to about 2 μm, and the second substrate comprises polysilicon or doped silicon. The slow wave inductive structure further includes a second conductive winding on an opposite side of the second substrate from the first conductive winding.