Invention Grant
- Patent Title: Multilayer stack of semiconductor-on-insulator type, associated production process, and radio frequency module comprising it
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Application No.: US17124142Application Date: 2020-12-16
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Publication No.: US11610806B2Publication Date: 2023-03-21
- Inventor: Shay Reboh , Pablo Acosta Alba
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1915019 20191219
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L23/66
Abstract:
A production method for a semi-conductor-on-insulator type multilayer stack includes ion implantation in a buried portion of a superficial layer of a support substrate, so as to form a layer enriched with at least one gas, intended to form a porous semi-conductive material layer, the thermal oxidation of a superficial portion of the superficial layer to form an oxide layer extending from the surface of the support substrate, the oxidation and the implantation of ions being arranged such that the oxide layer and the enriched layer are juxtaposed, and the assembly of the support substrate and of a donor substrate.
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