Invention Grant
- Patent Title: Conductive feature with non-uniform critical dimension and method of manufacturing the same
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Application No.: US17077842Application Date: 2020-10-22
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Publication No.: US11610833B2Publication Date: 2023-03-21
- Inventor: Shing-Yih Shih , Jheng-Ting Jhong
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/48 ; H01L23/00 ; H01L21/768 ; H01L21/3065

Abstract:
The present disclosure provides a semiconductor device, a semiconductor assembly and method of manufacturing the semiconductor assembly. The semiconductor device includes a substrate, a conductive feature in the substrate, an isolation liner between the substrate and the conductive feature, and a main component in the substrate. The conductive feature includes first to third blocks. The first block has a uniform first critical dimension, wherein the main component is disposed around the first block. The second block has a uniform second critical dimension greater than the first critical dimension. The third block is interposed between the first block and the second block and has varying third critical dimensions.
Public/Granted literature
- US20220130736A1 CONDUCTIVE FEATURE WITH NON-UNIFORM CRITICAL DIMENSION AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2022-04-28
Information query
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